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Eljarrat, A. and Gacevic, Zarko and Fernández-Garrido, Sergio and Calleja Pardo, Enrique and Magén, C. and Estradé, S. and Peiró, F. (2011). Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy. In: "2nd Joint Congress Of The Portuguese And Spanish Microscopy Societies", 18/10/2011 - 21/10/2012, Aveiro, Portugal. pp. 1-3.
Title: | Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Poster) |
Event Title: | 2nd Joint Congress Of The Portuguese And Spanish Microscopy Societies |
Event Dates: | 18/10/2011 - 21/10/2012 |
Event Location: | Aveiro, Portugal |
Title of Book: | Proceedings of 2nd Joint Congress Of The Portuguese And Spanish Microscopy Societies |
Date: | 2011 |
Subjects: | |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Ingeniería Electrónica |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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Molecular beam epitaxy growth of ten-period lattice-matched InAlN/GaN distributed Bragg reflectors (DBRs) with peak reflectivity centered around 400nm is reported including optical and transmission electron microscopy (TEM) measurements [1]. Good periodicity heterostructures with crack-free surfaces were confirmed, but, also a significant residual optical absorption below the bandgap was measured. The TEM characterization ascribes the origin of this problem to polymorfism and planar defects in the GaN layers and to the existence of an In-rich layer at the InAlN/GaN interfaces. In this work, several TEM based techniques have been combined.
Item ID: | 13580 |
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DC Identifier: | https://oa.upm.es/13580/ |
OAI Identifier: | oai:oa.upm.es:13580 |
Deposited by: | Memoria Investigacion |
Deposited on: | 21 Nov 2012 12:53 |
Last Modified: | 21 Apr 2016 12:54 |