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Growth and characterization of InGaN/GaN quantum dots for violet/blue applications
Citation
Gacevic, Zarko and Lefebvre, P. and Calleja Pardo, Enrique and Bertram, F. and Schmidt, G. and Veit, P. and Christen, J. (2011). Growth and characterization of InGaN/GaN quantum dots for violet/blue applications. In: "International Conference on Nitride Semiconductors 2011", 10/07/2011 - 15/07/2011, Glasgow, UK. pp. 1-3.
Description
| Title: | Growth and characterization of InGaN/GaN quantum dots for violet/blue applications |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Article) |
| Event Title: | International Conference on Nitride Semiconductors 2011 |
| Event Dates: | 10/07/2011 - 15/07/2011 |
| Event Location: | Glasgow, UK |
| Title of Book: | Proceedings International Conference on Nitride Semiconductors 2011 |
| Date: | 2011 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
We report on plasma-assisted molecular beam epitaxy growth and characterization of InGaN/GaN quantum dots (QDs) for violet/blue applications.
More information
| Item ID: | 13581 |
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| DC Identifier: | https://oa.upm.es/13581/ |
| OAI Identifier: | oai:oa.upm.es:13581 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 25 Feb 2013 10:01 |
| Last Modified: | 21 Apr 2016 12:54 |
