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Ionoluminescence as sensor of structural disorder in crystalline SiO2: determination of amorphization threshold by swift heavy ions
Citation
Peña Rodríguez, Ovidio Y. and Jimenez Rey, D. and Manzano Santamaría, Javier and Olivares, J. and Muñoz, A. and Rivera de Mena, Antonio and Agullo Lopez, Fernando (2012). Ionoluminescence as sensor of structural disorder in crystalline SiO2: determination of amorphization threshold by swift heavy ions. "Applied Physics Express", v. 5 (n. 1); pp.. ISSN 1882-0786. https://doi.org/10.1143/APEX.5.011101.
Description
| Title: | Ionoluminescence as sensor of structural disorder in crystalline SiO2: determination of amorphization threshold by swift heavy ions |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Applied Physics Express |
| Date: | January 2012 |
| ISSN: | 1882-0786 |
| Volume: | 5 |
| Subjects: | |
| Faculty: | E.T.S.I. Industriales (UPM) |
| Department: | Ingeniería Nuclear [hasta 2014] |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Ionoluminescence (IL) has been used in this work as a sensitive tool to probe the microscopic electronic processes and structural changes produced on quartz by the irradiation with swift heavy ions. The IL yields have been measured as a function of irradiation fluence and electronic stopping power. The results are consistent with the assignment of the 2.7 eV (460 nm) band to the recombination of self-trapped excitons at the damaged regions in the irradiated material. Moreover, it was possible to determine the threshold for amorphization by a single ion impact, as 1:7 keV/nm, which agrees well with the results of previous studies.
More information
| Item ID: | 15630 |
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| DC Identifier: | https://oa.upm.es/15630/ |
| OAI Identifier: | oai:oa.upm.es:15630 |
| DOI: | 10.1143/APEX.5.011101 |
| Official URL: | http://apex.jsap.jp/link?APEX/5/011101/ |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 09 Dec 2013 18:30 |
| Last Modified: | 30 May 2017 16:06 |
