Citation
Anderson, Travis J. and Hobart, Karl D. and Nyakiti, Luke O. and Wheeler, Virginia D. and Myers-Ward, Rachael L. and Caldwell, Joshua D. and Bezares, Francisco J. and Jernigan, Glenn Geoffrey and Tadjer, Marko Jak and Imhoff, Eugene A. and Koehler, Andrew D. and Gaskill, D. Kurt and Eddy Jr., Charles R. and Kub, Francis J.
(2012).
Investigation of the Epitaxial Graphene/p-SiC Heterojunction.
"Ieee Electron Device Letters", v. 33
(n. 11);
pp. 1610-1612.
ISSN 0741-3106.
https://doi.org/10.1109/LED.2012.2211562.
Abstract
There has been significant research in the study of in-plane charge-carrier transport in graphene in order to understand and exploit its unique electrical properties; however, the vertical graphene–semiconductor system also presents opportunities for unique devices. In this letter, we investigate the epitaxial graphene/p-type 4H-SiC system to better understand this vertical heterojunction. The I–V behavior does not demonstrate thermionic emission properties that are indicative of a Schottky barrier but rather demonstrates characteristics of a semiconductor heterojunction. This is confirmed by the fitting of the temperature-dependent I–V curves to classical heterojunction equations and the observation of band-edge electroluminescence in SiC.
