Improved GaN-based HEMT performance by nanocrystalline diamond capping

Anderson, Travis J. and Hobart, Karl D. and Tadjer, Marko Jak and Feygelson, Tatyana I. and Imhoff, Eugene A. and Meyer, David J. and Katzer, D. Scott and Hite, Jennifer K. and Kub, Francis J. and Pate, Bradford B. and Binari, Steven. C. and Eddy Jr., Charles R. (2012). Improved GaN-based HEMT performance by nanocrystalline diamond capping. In: "70th Annual Device Research Conference", 18/06/2012-20/06/2012, University Park, Texas, EEUU. pp. 155-156.

Description

Title: Improved GaN-based HEMT performance by nanocrystalline diamond capping
Author/s:
  • Anderson, Travis J.
  • Hobart, Karl D.
  • Tadjer, Marko Jak
  • Feygelson, Tatyana I.
  • Imhoff, Eugene A.
  • Meyer, David J.
  • Katzer, D. Scott
  • Hite, Jennifer K.
  • Kub, Francis J.
  • Pate, Bradford B.
  • Binari, Steven. C.
  • Eddy Jr., Charles R.
Item Type: Presentation at Congress or Conference (Article)
Event Title: 70th Annual Device Research Conference
Event Dates: 18/06/2012-20/06/2012
Event Location: University Park, Texas, EEUU
Title of Book: 70th Annual Device Research Conference
Título de Revista/Publicación: Device research conference digest,
Date: 2012
ISSN: 0000000000000
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

As a wide-bandgap semiconductor, gallium nitride (GaN) is an attractive material for next-generation power devices. To date, the capabilities of GaN-based high electron mobility transistors (HEMTs) have been limited by self-heating effects (drain current decreases due to phonon scattering-induced carrier velocity reductions at high drain fields). Despite awareness of this, attempts to mitigate thermal impairment have been limited due to the difficulties involved with placing high thermal conductivity materials close to heat sources in the device. Heat spreading schemes have involved growth of AIGaN/GaN on single crystal or CVD diamond, or capping of fullyprocessed HEMTs using nanocrystalline diamond (NCD). All approaches have suffered from reduced HEMT performance or limited substrate size. Recently, a "gate after diamond" approach has been successfully demonstrated to improve the thermal budget of the process by depositing NCD before the thermally sensitive Schottky gate and also to enable large-area diamond implementation.

More information

Item ID: 15755
DC Identifier: https://oa.upm.es/15755/
OAI Identifier: oai:oa.upm.es:15755
Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6256985
Deposited by: Memoria Investigacion
Deposited on: 22 Jun 2013 08:30
Last Modified: 21 Apr 2016 16:03
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