Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers

Anderson, Travis J. and Tadjer, Marko Jak and Hobart, Karl D. and Feygelson, Tatyana I. and Caldwell, Joshua D. and Mastro, Michael A. and Hite, Jennifer K. and Eddy Jr., Charles R. and Kub, Francis J. and Pate, Bradford B. (2012). Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers. In: "CSManTech Conference", 23/04/2012-26-04/2012, Boston, Massachusetts, USA. pp..

Description

Title: Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers
Author/s:
  • Anderson, Travis J.
  • Tadjer, Marko Jak
  • Hobart, Karl D.
  • Feygelson, Tatyana I.
  • Caldwell, Joshua D.
  • Mastro, Michael A.
  • Hite, Jennifer K.
  • Eddy Jr., Charles R.
  • Kub, Francis J.
  • Pate, Bradford B.
Item Type: Presentation at Congress or Conference (Article)
Event Title: CSManTech Conference
Event Dates: 23/04/2012-26-04/2012
Event Location: Boston, Massachusetts, USA
Title of Book: Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers
Título de Revista/Publicación: CS Mantech Conference Digest
Date: April 2012
ISSN: 0000000000000
Subjects:
Freetext Keywords: Wide bandgap, GaN, HEMT, nanocrystalline diamond, raman spectroscopy
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[thumbnail of INVE_MEM_2012_130408.pdf]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (677kB) | Preview

Abstract

Reduced performance in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) as a result of self-heating has been well-documented. A new approach, termed “diamond-before-gate" is shown to improve the thermal budget of the deposition process and enables large area diamond without degrading the gate metal NCD capped devices had a 20% lower channel temperature at equivalent power dissipation.

More information

Item ID: 15756
DC Identifier: https://oa.upm.es/15756/
OAI Identifier: oai:oa.upm.es:15756
Official URL: http://gaasmantech.com/Digests/2012/papers/11a.5.0...
Deposited by: Memoria Investigacion
Deposited on: 23 Jun 2013 12:21
Last Modified: 27 Feb 2023 07:31
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM