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Anderson, Travis J. and Tadjer, Marko Jak and Hobart, Karl D. and Feygelson, Tatyana I. and Caldwell, Joshua D. and Mastro, Michael A. and Hite, Jennifer K. and Eddy Jr., Charles R. and Kub, Francis J. and Pate, Bradford B. (2012). Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers. In: "CSManTech Conference", 23/04/2012-26-04/2012, Boston, Massachusetts, USA. pp..
Title: | Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Article) |
Event Title: | CSManTech Conference |
Event Dates: | 23/04/2012-26-04/2012 |
Event Location: | Boston, Massachusetts, USA |
Title of Book: | Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers |
Título de Revista/Publicación: | CS Mantech Conference Digest |
Date: | April 2012 |
ISSN: | 0000000000000 |
Subjects: | |
Freetext Keywords: | Wide bandgap, GaN, HEMT, nanocrystalline diamond, raman spectroscopy |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Ingeniería Electrónica |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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Reduced performance in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) as a result of self-heating has been well-documented. A new approach, termed “diamond-before-gate" is shown to improve the thermal budget of the deposition process and enables large area diamond without degrading the gate metal NCD capped devices had a 20% lower channel temperature at equivalent power dissipation.
Item ID: | 15756 |
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DC Identifier: | https://oa.upm.es/15756/ |
OAI Identifier: | oai:oa.upm.es:15756 |
Official URL: | http://gaasmantech.com/Digests/2012/papers/11a.5.0... |
Deposited by: | Memoria Investigacion |
Deposited on: | 23 Jun 2013 12:21 |
Last Modified: | 27 Feb 2023 07:31 |