Citation
Tadjer, Marko Jak and Anderson, Travis J. and Hobart, Karl D. and Nyakiti, Luke O. and Wheeler, Virginia D. and Myers-Ward, Rachael L. and Gaskill, D. Kurt and Eddy Jr., Charles R. and Kub, Francis J. and Calle Gómez, Fernando
(2012).
Vertical conduction properties of few-layer epitaxial graphene / n-type 4H-SiC heterojunctions at cryogenic temperatures.
"Applied Physics Letters"
(n. 100);
pp. 193506-193509.
ISSN 0003-6951.
https://doi.org/10.1063/1.4712621.
Abstract
Vertical diodes of epitaxial graphene on n 4H-SiC were investigated. The graphene Raman spectraexhibited a higher intensity in the G-line than the 2D-line, indicative of a few-layer graphene film.Rectifying properties improved at low temperatures as the reverse leakage decreased over six ordersof magnitude without freeze-out in either material. Carrier concentration of 10 16 cm 3in the SiCremained stable down to 15 K, while accumulation charge decreased and depletion width increasedin forward bias. The low barrier height of 0.08 eV and absence of recombination-induced emissionindicated majority carrier field emission as the dominant conduction mechanism.
