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García Hemme, Eric, García Hernansanz, Rodrigo, Olea Ariza, Javier, Pastor Pastor, David, Prado Millán, Alvaro del, Mártil de la Plaza, Ignacio and González Díaz, Germán (2012). Sub-bandgap spectral photo-response analysis of Ti supersaturated Si. "Applied Physics Letters", v. 101 (n. 19); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4766171.
Title: | Sub-bandgap spectral photo-response analysis of Ti supersaturated Si |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Applied Physics Letters |
Date: | November 2012 |
ISSN: | 0003-6951 |
Volume: | 101 |
Subjects: | |
Freetext Keywords: | deep levels, electrical conductivity, electron-hole Recombination, elemental semiconductors, melting, metal-insulator transition, optical constants, photoconductivity, pulsed laser deposition, silicon |
Faculty: | Instituto de Energía Solar (IES) (UPM) |
Department: | Otro |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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We have analyzed the increase of the sheet conductance (ΔG□) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high ΔG□, even higher than that measured in a silicon reference sample. This increase in the ΔG□ magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for concentrations of deep levels above the insulator-metal transition.
Item ID: | 16081 |
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DC Identifier: | https://oa.upm.es/16081/ |
OAI Identifier: | oai:oa.upm.es:16081 |
DOI: | 10.1063/1.4766171 |
Official URL: | http://apl.aip.org/resource/1/applab/v101/i19/p192... |
Deposited by: | Memoria Investigacion |
Deposited on: | 20 Jul 2013 09:37 |
Last Modified: | 21 Apr 2016 16:25 |