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Absorption coefficient for the intraband transitions in quantum dot materials
Citation
Luque López, Antonio and Martí Vega, Antonio and Mellor Null, Alexander Virgil and Fuertes Marrón, David and Tobías Galicia, Ignacio and Antolín Fernández, Elisa (2013). Absorption coefficient for the intraband transitions in quantum dot materials. "Progress in Photovoltaics: Research and Applications", v. 21 (n. 4); pp. 658-667. ISSN 1062-7995. https://doi.org/10.1002/pip.1250.
Description
| Title: | Absorption coefficient for the intraband transitions in quantum dot materials |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Progress in Photovoltaics: Research and Applications |
| Date: | June 2013 |
| ISSN: | 1062-7995 |
| Volume: | 21 |
| Subjects: | |
| Freetext Keywords: | intermediate band solar cell; absorption; quantum dot; quantum calculations |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Electrónica Física |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation of variables, single band k·p model is used in which most elements may be expressed analytically. The analytical formulae are collected in the appendix of this paper. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band
More information
| Item ID: | 16087 |
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| DC Identifier: | https://oa.upm.es/16087/ |
| OAI Identifier: | oai:oa.upm.es:16087 |
| DOI: | 10.1002/pip.1250 |
| Official URL: | http://onlinelibrary.wiley.com/doi/10.1002/pip.1250/abstract |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 01 Jul 2013 17:12 |
| Last Modified: | 01 Jul 2015 22:56 |
