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Morales Sánchez, Francisco Miguel, Carvalho, Daniel, Ben, T., García Roja, Rafael, Molina Rubio, Sergio Ignacio, Martí Vega, Antonio, Luque López, Antonio, Staddon, Chis. R., Campion, Richard P. and Foxon, C.T. (2012). Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN. "Scripta Materialia", v. 66 (n. 6); pp. 351-354. ISSN 1359-6462. https://doi.org/10.1016/j.scriptamat.2011.11.025.
Title: | Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Scripta Materialia |
Date: | March 2012 |
ISSN: | 1359-6462 |
Volume: | 66 |
Subjects: | |
Freetext Keywords: | Compound semiconductors (InGaAsN), Dilute arsenide, Transmission electron microscopy (TEM), X-ray diffraction (XRD) |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Electrónica Física |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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Arsenic alloying is observed for epitaxial layers nominally intended to be In0.75Ga0.25N. Voids form beneath their interfaces with GaAs substrates, acting as sources of Ga + As out-diffusion into the growing epilayers. As a result, heteroepitaxial single-phase quaternary InxGa1-xAsyN1-y, films are formed with x similar to 0.55 and 0.05 menor que y menor que 0,10. While an undoped epilayer retains the wurtzite structure, a Mn-doped sample showed randomly spaced dopant segregations, which, together with a slightly higher As concentration, led to a transformation from the hexagonal to the twinned cubic phase.
Item ID: | 16097 |
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DC Identifier: | https://oa.upm.es/16097/ |
OAI Identifier: | oai:oa.upm.es:16097 |
DOI: | 10.1016/j.scriptamat.2011.11.025 |
Official URL: | http://www.sciencedirect.com/science/article/pii/S... |
Deposited by: | Memoria Investigacion |
Deposited on: | 06 Jul 2013 08:25 |
Last Modified: | 31 Oct 2014 11:14 |