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Effect of the oxygen isoelectronic substitution in Cu2ZnSnS4 and its photovoltaic application
Citation
Tablero Crespo, César 
ORCID: https://orcid.org/0000-0001-9721-1549
(2012).
Effect of the oxygen isoelectronic substitution in Cu2ZnSnS4 and its photovoltaic application.
"Thin Solid Films", v. 520
(n. 15);
pp. 5011-5013.
ISSN 0040-6090.
https://doi.org/10.1016/j.tsf.2012.03.020.
Description
| Title: | Effect of the oxygen isoelectronic substitution in Cu2ZnSnS4 and its photovoltaic application |
|---|---|
| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Thin Solid Films |
| Date: | 31 May 2012 |
| ISSN: | 0040-6090 |
| Volume: | 520 |
| Subjects: | |
| Freetext Keywords: | Electronic structure; Semiconductors; Impurities; Photovoltaics |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Electrónica Física |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The optoelectronic properties of Cu2ZnSnS4 and environmental considerations have attracted significant interest for photovoltaics. Using first-principles, we analyze the possible improvement of this material as a photovoltaic absorber via the isoelectronic substitution of S with O atoms. The evolution of the acceptor level is analyzed with respect to the atomic position of the nearest neighbors of the O atom. We estimate the maximum efficiency of this compound when used as a light absorber. The presence of the sub-band gap level below the conduction band could increases the solar-energy conversion with respect to the host.
More information
| Item ID: | 16117 |
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| DC Identifier: | https://oa.upm.es/16117/ |
| OAI Identifier: | oai:oa.upm.es:16117 |
| DOI: | 10.1016/j.tsf.2012.03.020 |
| Official URL: | http://www.sciencedirect.com/science/article/pii/S... |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 07 Jul 2013 07:25 |
| Last Modified: | 21 Apr 2016 16:27 |
