Full text
|
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (2MB) | Preview |
Electronic property analysis of O-doped Cu3SbS3
Citation
Tablero Crespo, César (2012). Electronic property analysis of O-doped Cu3SbS3. "Solar Energy Materials and Solar Cells", v. 104 ; pp. 180-184. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2012.05.013.
Description
| Title: | Electronic property analysis of O-doped Cu3SbS3 |
|---|---|
| Author/s: |
|
| Item Type: | Article |
| Título de Revista/Publicación: | Solar Energy Materials and Solar Cells |
| Date: | September 2012 |
| ISSN: | 0927-0248 |
| Volume: | 104 |
| Subjects: | |
| Freetext Keywords: | Ionization levels; Electronic structure; Semiconductors; Impurities; Photovoltaics |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Electrónica Física |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The ternary Cu-Sb-S semiconductors are considered to be sustainable and potential alternative absorber materials in thin film photovoltaic applications. In these compounds, several phases may coexist, albeit in different proportions depending on experimental growth conditions. Additionally, the photovoltaic efficiency could be increased with isoelectronic doping. In this work we analyze the electronic properties of O-doped Cu3SbS3 in two structures: the wittichenite and the skinnerite. We use first-principles within the density functional formalism with two different exchange-correlation potentials. In addition, we estimate the potential of these compounds for photovoltaic applications.
More information
| Item ID: | 16128 |
|---|---|
| DC Identifier: | https://oa.upm.es/16128/ |
| OAI Identifier: | oai:oa.upm.es:16128 |
| DOI: | 10.1016/j.solmat.2012.05.013 |
| Official URL: | http://www.sciencedirect.com/science/article/pii/S0927024812002383 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 06 Jul 2013 11:19 |
| Last Modified: | 02 Oct 2014 22:56 |
