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Tobías Galicia, Ignacio and Luque López, Antonio and Antolín Fernández, Elisa and García-Linares Fontes, Pablo and Ramiro Gonzalez, Iñigo and Hernández Martín, Estela and Martí Vega, Antonio (2012). Realistic performance prediction in nanostructured solar cells as a function of nanostructure dimensionality and density. "Journal of Applied Physics", v. 112 (n. 12); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.4770464.
Title: | Realistic performance prediction in nanostructured solar cells as a function of nanostructure dimensionality and density |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Journal of Applied Physics |
Date: | December 2012 |
ISSN: | 0021-8979 |
Volume: | 112 |
Subjects: | |
Freetext Keywords: | Fermi level, gallium arsenide, III-V semiconductors, indium compounds, nanowires, quantum well devices, semiconductor quantum dots, semiconductor quantum wells, semiconductor quantum wires, solar cells |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Electrónica Física |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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The behavior of quantum dot, quantum wire, and quantum well InAs/GaAs solar cells is studied with a very simplified model based on experimental results in order to assess their performance as a function of the low bandgap material volume fraction fLOW. The efficiency of structured devices is found to exceed the efficiency of a non-structured GaAs cell, in particular under concentration, when fLOW is high; this condition is easier to achieve with quantum wells. If three different quasi Fermi levels appear with quantum dots the efficiency can be much higher.
Item ID: | 16139 |
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DC Identifier: | https://oa.upm.es/16139/ |
OAI Identifier: | oai:oa.upm.es:16139 |
DOI: | 10.1063/1.4770464 |
Official URL: | http://jap.aip.org/resource/1/japiau/v112/i12/p124518_s1?isAuthorized=no |
Deposited by: | Memoria Investigacion |
Deposited on: | 08 Jul 2013 16:31 |
Last Modified: | 21 Apr 2016 16:28 |