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Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals
Citation
Nötzel, R. and Urbańczyk, Adam (2012). Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals. "Journal of Crystal Growth", v. 341 (n. 1); pp. 24-26. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2011.12.068.
Description
| Title: | Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Journal of Crystal Growth |
| Date: | February 2012 |
| ISSN: | 0022-0248 |
| Volume: | 341 |
| Subjects: | |
| Freetext Keywords: | A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials |
| Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Department: | Otro |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
We report growth of InAs/GaAs quantum dots (QDs) by molecular beam epitaxy with low density of 2 μm−2 by conversion of In nanocrystals deposited at low temperatures. The total amount of InAs used is about one monolayer, which is less than the critical thickness for conventional Stranski–Krastanov QDs. We also demonstrate the importance of the starting surface reconstruction for obtaining uniform QDs. The QD emission wavelength is easily tunable upon post-growth annealing with no wetting layer signal visible for short anneals. Microphotoluminescence measurements reveal well separated and sharp emission lines of individual QDs.
More information
| Item ID: | 16140 |
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| DC Identifier: | https://oa.upm.es/16140/ |
| OAI Identifier: | oai:oa.upm.es:16140 |
| DOI: | 10.1016/j.jcrysgro.2011.12.068 |
| Official URL: | http://www.sciencedirect.com/science/article/pii/S0022024811011067 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 27 Jul 2013 08:24 |
| Last Modified: | 21 Apr 2016 16:28 |
