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Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies
Citation
Tablero Crespo, César 
ORCID: https://orcid.org/0000-0001-9721-1549
(2012).
Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies.
"Progress in Photovoltaics: Research and Applications"
;
ISSN 1099-159X.
https://doi.org/10.1002/pip.2173.
Description
| Title: | Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Progress in Photovoltaics: Research and Applications |
| Date: | February 2012 |
| ISSN: | 1099-159X |
| Subjects: | |
| Freetext Keywords: | Ionization levels;electronic structure;semiconductors;impurities;photovoltaics |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Electrónica Física |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The electronic properties and the low environmental impact of Cu 3 BiS 3 make this compound a promising material for low-cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu 3 BiS 3 have been obtained using two different exchange-correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto-electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material.
More information
| Item ID: | 16417 |
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| DC Identifier: | https://oa.upm.es/16417/ |
| OAI Identifier: | oai:oa.upm.es:16417 |
| DOI: | 10.1002/pip.2173 |
| Official URL: | http://onlinelibrary.wiley.com/doi/10.1002/pip.217... |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 15 Jul 2013 17:21 |
| Last Modified: | 21 Apr 2016 16:43 |
