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Effect of concentration on the performance of quantum dot intermediate-band solar cells
Citation
Okada, Y. and Yoshida, Katsuhisa and Shoji, Y. and Ogura, A. and García-Linares Fontes, Pablo and Martí Vega, Antonio and Luque López, Antonio (2012). Effect of concentration on the performance of quantum dot intermediate-band solar cells. In: "8th International Conference on Concentrating Photovoltaic Systems", 16/04/2012 - 18/04/2012, Toledo, España. ISBN 978-0-7354-1086-2. pp. 10-13. https://doi.org/10.1063/1.4753822.
Description
| Title: | Effect of concentration on the performance of quantum dot intermediate-band solar cells |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Article) |
| Event Title: | 8th International Conference on Concentrating Photovoltaic Systems |
| Event Dates: | 16/04/2012 - 18/04/2012 |
| Event Location: | Toledo, España |
| Title of Book: | 8th International Conference on Concentrating Photovoltaic Systems |
| Date: | 16 April 2012 |
| ISBN: | 978-0-7354-1086-2 |
| Subjects: | |
| Freetext Keywords: | quantum dot solar cell, intermediate-band solar cell, concentration, self-consistent device simulation |
| Faculty: | Instituto de Energía Solar (IES) (UPM) |
| Department: | Electrónica Física |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Implementation of a high-efficiency quantum dot intermediate-band solar cell (QD-IBSC) must accompany a sufficient photocurrent generation via IB states. The demonstration of a QD-IBSC is presently undergoing two stages. The first is to develop a technology to fabricate high-density QD stacks or a superlattice of low defect density placed within the active region of a p-i-n SC, and the second is to realize half-filled IB states to maximize the photocurrent generation by two-step absorption of sub-bandgap photons. For this, we have investigated the effect of light concentration on the characteristics of QDSCs comprised of multi-layer stacks of self-organized InAs/GaNAs QDs grown with and without impurity doping in molecular beam epitaxy.
More information
| Item ID: | 19801 |
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| DC Identifier: | https://oa.upm.es/19801/ |
| OAI Identifier: | oai:oa.upm.es:19801 |
| DOI: | 10.1063/1.4753822 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 18 Sep 2013 16:16 |
| Last Modified: | 21 Apr 2016 21:18 |
