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Iborra Grau, Enrique and Capilla Osorio, José and Olivares Roza, Jimena and Clement Lorenzo, Marta and Felmetsger, Valeriy (2012). Piezoelectric and electroacoustic properties of Ti-doped AlN thin films as a function of Ti content. In: "2012 IEEE International Ultrasonics Symposium (IUS)", 07/10/2012 - 10/10/2012, Dresde, Alemania. pp. 2734-2736.
Title: | Piezoelectric and electroacoustic properties of Ti-doped AlN thin films as a function of Ti content |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Article) |
Event Title: | 2012 IEEE International Ultrasonics Symposium (IUS) |
Event Dates: | 07/10/2012 - 10/10/2012 |
Event Location: | Dresde, Alemania |
Title of Book: | IEEE International Ultrasonics Symposium |
Date: | 2012 |
Subjects: | |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Tecnología Electrónica [hasta 2014] |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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In this work we present the assessment of the structural and piezoelectric properties of Al(0.5-x)TixN0.5 compounds (titanium content menor que6% atomic), which are expected to possess improved properties than conventional AlN films, such as larger piezoelectric activity, thermal stability of frequency and temperature resistance. Al:Ti:N films were deposited from a twin concentric target of Al and Ti by reactive AC sputtering, which provided films with a radial gradient of the Ti concentration. The properties of the films were investigated as a function of their composition, which was measured by electron dispersive energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. The microstructure and morphology of the films were assessed by X-ray diffraction and infrared reflectance. Their electroacoustic properties and dielectric constant were derived from the frequency response of BAW test resonators. Al:Ti:N films properties appear to be strongly dependent on the Ti content, which modifies the AlN wurtzite crystal structure leading to greater dielectric constant, lower sound velocities, lower electromechanical factor and moderately improved temperature coefficient of the resonant frequency.
Item ID: | 20007 |
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DC Identifier: | https://oa.upm.es/20007/ |
OAI Identifier: | oai:oa.upm.es:20007 |
Official URL: | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb... |
Deposited by: | Memoria Investigacion |
Deposited on: | 28 Sep 2013 11:14 |
Last Modified: | 21 Apr 2016 22:11 |