Electrical, photoelectrical and morphological properties of ZnO nanowire networks grown on SiO2 and on Si

Celeste Vega, Nadia, Tirado, Mónica, Comedi, David, Rodríguez Domínguez, Andrés ORCID: https://orcid.org/0000-0001-8851-1777, Rodríguez Rodríguez, Tomás ORCID: https://orcid.org/0000-0002-4779-5862, Hughes, Gareth M., Grovenor, Chris R.M. and Audebert, Fernando (2012). Electrical, photoelectrical and morphological properties of ZnO nanowire networks grown on SiO2 and on Si. In: "Materials Research Sao Paulo 2011", 30/09/2011 - 02/10/2011, Sao Paulo, Brasil. pp. 1-6.

Description

Title: Electrical, photoelectrical and morphological properties of ZnO nanowire networks grown on SiO2 and on Si
Author/s:
Item Type: Presentation at Congress or Conference (Article)
Event Title: Materials Research Sao Paulo 2011
Event Dates: 30/09/2011 - 02/10/2011
Event Location: Sao Paulo, Brasil
Title of Book: Materials Research
Date: December 2012
Volume: 16
Subjects:
Freetext Keywords: nanostructures, semiconductors, ZnO, photoluminescence, photoconductivity
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO2 thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by scanning electron microscopy on samples grown at 600 °C and 720 °C substrate temperature, while an focused ion beam was used to study the ZnO NFN/Si NWs/Si and ZnO NFN/SiO2 interfaces. Photoluminescence, electrical conductance and photoconductance of ZnO-NFN was studied for the sample grown on SiO2. The photoluminescence spectra show strong peaks due to exciton recombination and lattice defects. The ZnO-NFN presents quasi-persistent photoconductivity effects and ohmic I-V characteristics which become nonlinear and hysteretic as the applied voltage is increased. The electrical conductance as a function of temperature can be described by a modified three dimensional variable hopping model with nanometer-ranged typical hopping distances.

More information

Item ID: 20104
DC Identifier: https://oa.upm.es/20104/
OAI Identifier: oai:oa.upm.es:20104
Official URL: http://www.scielo.br/scielo.php?pid=S1516-14392013...
Deposited by: Memoria Investigacion
Deposited on: 29 Sep 2013 10:44
Last Modified: 21 Apr 2016 22:29
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