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Celeste Vega, Nadia, Tirado, Mónica, Comedi, David, Rodríguez Domínguez, Andrés ORCID: https://orcid.org/0000-0001-8851-1777, Rodríguez Rodríguez, Tomás
ORCID: https://orcid.org/0000-0002-4779-5862, Hughes, Gareth M., Grovenor, Chris R.M. and Audebert, Fernando
(2012).
Electrical, photoelectrical and morphological properties of ZnO nanowire networks grown on SiO2 and on Si.
In: "Materials Research Sao Paulo 2011", 30/09/2011 - 02/10/2011, Sao Paulo, Brasil. pp. 1-6.
Title: | Electrical, photoelectrical and morphological properties of ZnO nanowire networks grown on SiO2 and on Si |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Article) |
Event Title: | Materials Research Sao Paulo 2011 |
Event Dates: | 30/09/2011 - 02/10/2011 |
Event Location: | Sao Paulo, Brasil |
Title of Book: | Materials Research |
Date: | December 2012 |
Volume: | 16 |
Subjects: | |
Freetext Keywords: | nanostructures, semiconductors, ZnO, photoluminescence, photoconductivity |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Tecnología Electrónica [hasta 2014] |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO2 thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by scanning electron microscopy on samples grown at 600 °C and 720 °C substrate temperature, while an focused ion beam was used to study the ZnO NFN/Si NWs/Si and ZnO NFN/SiO2 interfaces. Photoluminescence, electrical conductance and photoconductance of ZnO-NFN was studied for the sample grown on SiO2. The photoluminescence spectra show strong peaks due to exciton recombination and lattice defects. The ZnO-NFN presents quasi-persistent photoconductivity effects and ohmic I-V characteristics which become nonlinear and hysteretic as the applied voltage is increased. The electrical conductance as a function of temperature can be described by a modified three dimensional variable hopping model with nanometer-ranged typical hopping distances.
Item ID: | 20104 |
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DC Identifier: | https://oa.upm.es/20104/ |
OAI Identifier: | oai:oa.upm.es:20104 |
Official URL: | http://www.scielo.br/scielo.php?pid=S1516-14392013... |
Deposited by: | Memoria Investigacion |
Deposited on: | 29 Sep 2013 10:44 |
Last Modified: | 21 Apr 2016 22:29 |