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Calle Gómez, Fernando and Palacios, Tomás (2012). Nanotechnology for high frequency communications: nitrides and graphene. In: "13th edition of Trends in Nanotechnology International Conference (TNT2012)", 10/09/2012 - 14/09/2012, Madrid, España.
Title: | Nanotechnology for high frequency communications: nitrides and graphene |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Article) |
Event Title: | 13th edition of Trends in Nanotechnology International Conference (TNT2012) |
Event Dates: | 10/09/2012 - 14/09/2012 |
Event Location: | Madrid, España |
Title of Book: | Trends in Nanotechnology International Conference (TNT2012) |
Date: | 2012 |
Subjects: | |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Ingeniería Electrónica |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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The achievement of higher frequencies (HF) and the reduction of energy consumption, to improve sensing, communication and computation, involve the continued scaling down to the nanometer level. This scaling is enabled by of innovative device designs, improved processing technologies and assessment tools, and new material structures. In this work, we have used all these factors to demonstrate state-of-the-art HF devices in two materials with quite different electronic properties: wide semiconductor bandgap III-nitrides for resonators and power amplifiers; and graphene, a zero bandgap material expected to revolutionize low noise and HF flexible electronics. Some issues faced during their development will be discussed during the talk.
Item ID: | 20365 |
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DC Identifier: | https://oa.upm.es/20365/ |
OAI Identifier: | oai:oa.upm.es:20365 |
Deposited by: | Memoria Investigacion |
Deposited on: | 02 Oct 2013 17:25 |
Last Modified: | 21 Apr 2016 23:06 |