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Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators
Citation
Rodriguez Madrid, Juan and Fuentes Iriarte, Gonzalo and Araujo, Daniel and Villar, María Del Pilar and Williams, Oliver A. and Müller Sebert, W. and Calle Gómez, Fernando (2012). Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators. "Materials letters", v. 66 (n. 1); pp. 339-342. ISSN 0167-577X. https://doi.org/10.1016/j.matlet.2011.09.003.
Description
| Title: | Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Materials letters |
| Date: | January 2012 |
| ISSN: | 0167-577X |
| Volume: | 66 |
| Subjects: | |
| Freetext Keywords: | Diamond; AlN sputtering; High frequency; SAW resonators |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150 nm up to 3 μm thick. A high degree of the c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size.
More information
| Item ID: | 22295 |
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| DC Identifier: | https://oa.upm.es/22295/ |
| OAI Identifier: | oai:oa.upm.es:22295 |
| DOI: | 10.1016/j.matlet.2011.09.003 |
| Official URL: | http://www.sciencedirect.com/science/article/pii/S0167577X11010196 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 09 Feb 2014 09:09 |
| Last Modified: | 21 Apr 2016 14:09 |
