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Super-high-frequency SAW resonators on AlN/Diamond
Citation
Rodriguez Madrid, Juan and Fuentes Iriarte, Gonzalo and Pedrós Ayala, Jorge and Williams, Oliver A. and Brink, Dietmar and Calle Gómez, Fernando (2012). Super-high-frequency SAW resonators on AlN/Diamond. "IEEE Electron Device Letters", v. 33 (n. 4); pp. 495-497. ISSN 0741-3106. https://doi.org/10.1109/LED.2012.2183851.
Description
| Title: | Super-high-frequency SAW resonators on AlN/Diamond |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | IEEE Electron Device Letters |
| Date: | April 2012 |
| ISSN: | 0741-3106 |
| Volume: | 33 |
| Subjects: | |
| Freetext Keywords: | AlN/diamond, surface acoustic wave (SAW) resonator, super-high-frequency band, thickness influence |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10–14 GHz range with up to 36 dB out-of-band rejection.
More information
| Item ID: | 22297 |
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| DC Identifier: | https://oa.upm.es/22297/ |
| OAI Identifier: | oai:oa.upm.es:22297 |
| DOI: | 10.1109/LED.2012.2183851 |
| Official URL: | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6158573 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 09 Feb 2014 08:49 |
| Last Modified: | 16 Apr 2015 13:50 |
