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A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy
Citation
Gacevic, Zarko and Gómez Hernández, Víctor Jesús and García Lepetit, Noemí and Soto Rodríguez, Paul and Bengoechea Encabo, Ana and Fernández Garrido, Sergio and Nötzel, R. and Calleja Pardo, Enrique (2013). A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy. "Journal of Crystal Growth", v. 364 ; pp. 123-127. ISSN 0003-6951. https://doi.org/10.1016/j.jcrysgro.2012.11.031.
Description
| Title: | A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Journal of Crystal Growth |
| Date: | February 2013 |
| ISSN: | 0003-6951 |
| Volume: | 364 |
| Subjects: | |
| Freetext Keywords: | A1. Composition; A1. Growth diagram; A1. Strain; A1. Surface morphology; A3. Molecular beam; B1. InGaN |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
he composition, strain and surface morphology of (0001)InGaN layers are investigated as a function of growth temperature (460–645 °C) and impinging In flux. Three different growth regimes: nitrogen-rich, metal-rich and intermediate metal-rich, are clearly identified and found to be in correlation with surface morphology and strain relaxation. Best epilayers’ quality is obtained when growing under intermediate metal-rich conditions, with 1–2 monolayers thick In ad-coverage. For a given In flux, the In incorporation decreases with increasing growth temperature due to InN thermal decomposition that follows an Arrhenius behavior with 1.84±0.12 eV activation energy.
Funding Projects
| Type | Code | Acronym | Leader | Title |
|---|---|---|---|---|
| Government of Spain | MAT2008–04815 | Unspecified | Unspecified | Unspecified |
| Madrid Regional Government | P2009/ESP-1503 | Unspecified | Unspecified | Unspecified |
More information
| Item ID: | 22671 |
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| DC Identifier: | https://oa.upm.es/22671/ |
| OAI Identifier: | oai:oa.upm.es:22671 |
| DOI: | 10.1016/j.jcrysgro.2012.11.031 |
| Official URL: | http://www.sciencedirect.com/science/article/pii/S0022024812008287 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 16 Mar 2014 11:02 |
| Last Modified: | 30 Nov 2022 09:00 |
