Full text
|
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview |
Nanocrack-induced leakage current in AlInN/AlN/GaN
Citation
Minj, Albert and Cavalcoli, Daniela and Pandey, Saurabh and Fraboni, Beatrice and Cavallini, Anna and Brazzini, Tommaso and Calle Gómez, Fernando (2012). Nanocrack-induced leakage current in AlInN/AlN/GaN. "Scripta Materialia", v. 66 (n. 6); pp. 327-330. ISSN 1359-6462. https://doi.org/10.1016/j.scriptamat.2011.11.024.
Description
| Title: | Nanocrack-induced leakage current in AlInN/AlN/GaN |
|---|---|
| Author/s: |
|
| Item Type: | Article |
| Título de Revista/Publicación: | Scripta Materialia |
| Date: | March 2012 |
| ISSN: | 1359-6462 |
| Volume: | 66 |
| Subjects: | |
| Freetext Keywords: | C-AFM; Indium; Segregation; Nano-cracks; AlInN/AlN/GaN |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Here we report on the study of nano-crack formation in Al1−xInxN/AlN/GaN heterostructures, on its association with composition fluctuation and on its local electrical properties. It is shown here that indium segregation at nano-cracks and threading dislocations originating from the non-pseudomorphic AlN interlayer could be the cause of the high reverse-bias gate leakage current of Ni/Au Schottky contacts on Al1−xInxN/AlN/GaN heterostructures and significantly affects the contact rectifying behavior. Segregation of indium around crack tips in Al1−xInxN acting as conductive paths was assessed with conductive atomic force microscopy.
More information
| Item ID: | 22688 |
|---|---|
| DC Identifier: | https://oa.upm.es/22688/ |
| OAI Identifier: | oai:oa.upm.es:22688 |
| DOI: | 10.1016/j.scriptamat.2011.11.024 |
| Official URL: | http://www.sciencedirect.com/science/article/pii/S1359646211007172 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 03 Mar 2014 17:47 |
| Last Modified: | 21 Apr 2016 17:41 |
