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Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
Citation
Brazzini, Tommaso and Tadjer, Marko Jak and Gacevic, Zarko and Pandey, Saurabh and Cavallini, Anna and Behmenburg, H. and Giesen, C. and Heuken, M. and Calle Gómez, Fernando (2012). Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures. In: "International Workshop on Nitride Semiconductors (IWN2012)", 14/10/2012 - 19/10/2012, Sapporo, Japan. pp. 1-3.
Description
| Title: | Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Other) |
| Event Title: | International Workshop on Nitride Semiconductors (IWN2012) |
| Event Dates: | 14/10/2012 - 19/10/2012 |
| Event Location: | Sapporo, Japan |
| Title of Book: | International Workshop on Nitride Semiconductors (IWN2012) |
| Date: | 2012 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The quaternary nitride-based high electron mobility transistor (HEMT) has been recently a focus of interest because of the possibility to grow lattice-matched barrier to GaN and tune the barrier bandgap at the same time.
More information
| Item ID: | 22887 |
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| DC Identifier: | https://oa.upm.es/22887/ |
| OAI Identifier: | oai:oa.upm.es:22887 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 22 Mar 2014 12:23 |
| Last Modified: | 21 Apr 2016 20:48 |
