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Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
Citation
Brazzini, Tommaso and Bengoechea Encabo, Ana and Sánchez García, Miguel Angel and Calle Gómez, Fernando (2012). Investigation of AlInN barrier ISFET structures with GaN capping for pH detection. In: "International Workshop on Nitride Semiconductors (IWN2012)", 14/10/2012 - 19/10/2012, Sapporo, Japan. pp. 1-3.
Description
| Title: | Investigation of AlInN barrier ISFET structures with GaN capping for pH detection |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Other) |
| Event Title: | International Workshop on Nitride Semiconductors (IWN2012) |
| Event Dates: | 14/10/2012 - 19/10/2012 |
| Event Location: | Sapporo, Japan |
| Title of Book: | International Workshop on Nitride Semiconductors (IWN2012) |
| Date: | 2012 |
| Subjects: | |
| Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Department: | Otro |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
In the last decade the interest in nitride-based sensors (gas, ions...) and bio-sensors is increased. In the case of ion sensitive FET (ISFET), gate voltages induced by ions adsorbed onto the gate region modulate the source-drain currents.
More information
| Item ID: | 22896 |
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| DC Identifier: | https://oa.upm.es/22896/ |
| OAI Identifier: | oai:oa.upm.es:22896 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 23 Mar 2014 09:41 |
| Last Modified: | 21 Apr 2016 20:50 |
