Citation
Alonso Alvarez, Diego and González Taboada, Alfonso and Ripalda Cobián, Jose María and Alén Millán, Benito and González Diez, M. Yolanda and González Soto, Luisa and García Martín, Jorge Miguel and Martí Vega, Antonio and Luque López, Antonio and Briones Fernández-Pola, Fernando and Sanchez, A.M. and Molina Rubio, Sergio Ignacio
(2008).
Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells.
"Applied Physics Letters", v. 93
(n. 12);
pp. 123114-1.
ISSN 0003-6951.
https://doi.org/10.1063/1.2978243.
Abstract
In this work we report the stacking of 50 InAs/GaAs quantum dot layers with a GaAs spacer thickness of 18 nm using GaP monolayers for strain compensation. We find a good structural and optical quality of the fabricated samples including a planar growth front across the whole structure, a reduction in the quantum dot size inhomogeneity, and an enhanced thermal stability of the emission. The optimized quantum dot stack has been embedded in a solar cell structure and we discuss the benefits and disadvantages of this approach for high efficiency photovoltaic applications.
