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Cánovas Díaz, Enrique and Martí Vega, Antonio and Luque López, Antonio and Walukiewicz, W. (2008). Optimum nitride concentration in multiband III-N-V alloys for high efficiency ideal solar cells. "Applied Physics Letters", v. 93 (n. 17); pp. 174109-1. ISSN 0003-6951. https://doi.org/10.1063/1.3013570.
Title: | Optimum nitride concentration in multiband III-N-V alloys for high efficiency ideal solar cells |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Applied Physics Letters |
Date: | October 2008 |
ISSN: | 0003-6951 |
Volume: | 93 |
Subjects: | |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Otro |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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III-Nx–V1−x highly mismatched alloys HMAs have been proposed as promising material candidates for the development of high efficiency solar cells. According to the band anticrossing model, these alloys present a multiband character with an intermediate band within the otherwise fundamental bandgap that gives them the ability of improving the efficiency by means of below-bandgap photon absorption. The efficiency of GaNxAs1−x, GaNxP1−x, and their quaternaries InyGa1−yNxAs1−x and GaNxP1−x−yAsy is estimated theoretically versus nitrogen content in this letter. Low nitrogen content in the range of 1%–3.5% in the HMAs analyzed leads to theoretical efficiencies above 60%.
Type | Code | Acronym | Leader | Title |
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FP7 | 211640 | IBPOWER | Unspecified | Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost |
Item ID: | 2384 |
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DC Identifier: | https://oa.upm.es/2384/ |
OAI Identifier: | oai:oa.upm.es:2384 |
DOI: | 10.1063/1.3013570 |
Official URL: | http://scitation.aip.org/dbt/dbt.jsp?KEY=APPLAB&Volume=93&Issue=17 |
Deposited by: | Memoria Investigacion |
Deposited on: | 25 Feb 2010 09:51 |
Last Modified: | 31 Oct 2014 12:21 |