Citation
Bailey, L.R. and King, P.D.C. and Veal, T.D. and McConville, Chris F. and Pereiro Viterbo, Juan and Grandal Quintana, Javier and Sánchez García, Miguel Angel and Muñoz Merino, Elias and Calleja Pardo, Enrique
(2008).
Band bending at In-rich InGaN surfaces.
"Journal of Applied Physics", v. 104
(n. 11);
pp..
ISSN 0021-8979.
https://doi.org/10.1063/1.3033373.
Abstract
The band bending and carrier concentration profiles as a function of depth below the surface for oxidized InxGa1−xN alloys with a composition range of 0.39 ≤ x ≤ 1.00 are investigated using x-ray photoelectron, infrared reflection, and optical absorption spectroscopies, and solutions of Poisson’s equation within a modified Thomas–Fermi approximation. All of these InGaN samples exhibit downward band bending ranging from 0.19 to 0.66 eV and a high surface sheet charge density ranging from 5.0×1012 to 1.5×1013 cm−2. The downward band bending is more pronounced in the most In-rich InGaN samples, resulting in larger near-surface electron concentrations.
