Aluminum nitride for heatspreading in RF IC’s

La Spina, L., Iborra Grau, Enrique ORCID:, Schellevis, H., Clement Lorenzo, Marta ORCID:, Olivares Roza, Jimena ORCID: and Nanver, L.K. (2008). Aluminum nitride for heatspreading in RF IC’s. "Solid State Electronics", v. 52 (n. 9); pp. 1359-1363. ISSN 0038-1101.


Title: Aluminum nitride for heatspreading in RF IC’s
Item Type: Article
Título de Revista/Publicación: Solid State Electronics
Date: September 2008
ISSN: 0038-1101
Volume: 52
Freetext Keywords: Aluminum nitride, bipolar transistor, electrothermal phenomena, heatspreader, piezoelectric characteristics, RF integration, thermal instabilities, thermal resistance.
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The AlN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC’s, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AlN as thick as 4 lm are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance.

More information

Item ID: 2617
DC Identifier:
OAI Identifier:
DOI: 10.1016/j.sse.2008.04.009
Official URL:
Deposited by: Memoria Investigacion
Deposited on: 18 Mar 2010 11:18
Last Modified: 20 Apr 2016 12:15
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