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García Hernansanz, Rodrigo and García Hemme, Eric and Pastor Pastor, David and Prado Millán, Alvaro del and Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and Ferrer Fernández, Francisco Javier (2013). Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells. In: "Spanish Conference on Electron Devices (CDE)", 12/02/2013 - 14/02/2013, Valladolid, Spain. pp. 337-340.
Title: | Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Article) |
Event Title: | Spanish Conference on Electron Devices (CDE) |
Event Dates: | 12/02/2013 - 14/02/2013 |
Event Location: | Valladolid, Spain |
Title of Book: | Spanish Conference on Electron Devices (CDE) |
Date: | 2013 |
Subjects: | |
Freetext Keywords: | Hydrogenated amorphous silicon; intermediate band; high pressure sputtering; HIT cell; composition; absorption bands. |
Faculty: | Instituto de Energía Solar (IES) (UPM) |
Department: | Otro |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.
Item ID: | 26348 |
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DC Identifier: | https://oa.upm.es/26348/ |
OAI Identifier: | oai:oa.upm.es:26348 |
Official URL: | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb... |
Deposited by: | Memoria Investigacion |
Deposited on: | 21 May 2014 18:44 |
Last Modified: | 22 Sep 2014 11:40 |