Citation
Luna García de la Infanta, Esperanza and Trampert, Achim and Miguel-Sanchez, J. and Fernández González, Alvaro de Guzmán and Ploog, K.H.
(2008).
Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1) B GaAs.
"Journal of Physics and Chemistry of Solids", v. 69
(n. 2-3);
pp. 343-346.
ISSN 0022-3697.
https://doi.org/10.1016/j.jpcs.2007.07.063.
Abstract
In this work, we present a detailed transmission electron microscopy analysis of the interfacial structure and composition uniformity of (Ga,In)(N,As) quantum wells grown by molecular beam epitaxy on vicinal GaAs(1 1 1)B substrates. Vertical composition fluctuations inside the (Ga,In)(N,As) quantum well are detected depending on the growth conditions, in particular the V/III flux ratio and the growth rate. This vertical composition fluctuation due to the phase separation tendency is in contrast to the (0 0 1) case, where the fluctuations proceed in the lateral direction. The specific character of the phase instabilities is discussed with respect to the spinodal decomposition of the (Ga,In)(N,As) alloy grown by step-flow on the misoriented (1 1 1)B substrates. The vertical composition fluctuations are explained by the formation of step bunches of alternating composition as a consequence of the different propagation velocity of steps with different atom terminations.
