Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes

Abstract

The characteristic temperatures of the threshold current density, T0, and external differential quantum efficiency, T1, of a series of (Ga,In)(N,As)/GaAs quantum well (QW) laser diodes are measured in the wavelength range from 1 to 1.5μm. It is found that both T0 and T1 strongly decrease with increasing lasing wavelength. The origin of this degradation is shown to be, in the case of T0, mostly dominated by a decrease in the transparency current density characteristic temperature, an increase in the optical losses and a decrease in the modal gain. The degradation of T1 is mainly due to the increase in the optical losses. The effective carrier recombination lifetime in the QW is shown to decrease from 1.2 to 0.2 ns with N content up to 2%, in good agreement with previous reports that link this low lifetime to non-radiative monomolecular recombination through defects in the QW. Carrier leakage is ruled out as the dominant process degrading T0 and T1 on the basis of the temperature dependence of the effective carrier recombination lifetime.