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Redondo-Cubero, Andrés, Gago, R., González-Posada Flores, Fernando, Kreissig, U., Di Forte Poisson, M-A., Braña, A.F. and Muñoz Merino, Elias ORCID: https://orcid.org/0000-0001-7482-2590
(2008).
Aluminium incorporation in AlGaN/GaN heterostructures: a comparative study by ion beam analysis and X-ray diffraction.
"Thin Solid Films", v. 516
(n. 23);
pp. 8447-8452.
ISSN 0040-6090.
https://doi.org/10.1016/j.tsf.2008.04.069.
Title: | Aluminium incorporation in AlGaN/GaN heterostructures: a comparative study by ion beam analysis and X-ray diffraction |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Thin Solid Films |
Date: | October 2008 |
ISSN: | 0040-6090 |
Volume: | 516 |
Subjects: | |
Freetext Keywords: | AlGaN; HEMT; RBS; ERDA; XRD |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Ingeniería Electrónica |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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The Al content in AlxGa1 − xN/GaN heterostructures has been determined by X-ray diffraction (XRD) and contrasted with absolute measurements from ion beam analysis (IBA) methods. For this purpose, samples with 0.1bxb0.3 grown by metal organic chemical vapour deposition on sapphire substrates have been studied. XRD and IBA corroborate the good epitaxial growth of the AlGaN layer, which slightly deteriorates with the incorporation of Al for xN0.2. The assessment of Al incorporation by XRD is quite reliable regarding the average value along the sample thickness. However, XRD analysis tends to overestimate the Al fraction at low contents, which is attributed to the presence of strain within the layer. For the highest Al incorporation, IBA detects a certain Al in-depth compositional profile that should be considered for better XRD data analysis.
Item ID: | 2705 |
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DC Identifier: | https://oa.upm.es/2705/ |
OAI Identifier: | oai:oa.upm.es:2705 |
DOI: | 10.1016/j.tsf.2008.04.069 |
Official URL: | http://www.elsevier.com/wps/find/journaldescriptio... |
Deposited by: | Memoria Investigacion |
Deposited on: | 14 May 2010 08:34 |
Last Modified: | 20 Apr 2016 12:23 |