Full text
|
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (303kB) | Preview |
Observation of giant photocurrent gain in highly doped (In,Ga)N/GaN MQW-based photodiodes
Citation
Rivera de Lucas, Carlos and Muñoz Merino, Elias (2008). Observation of giant photocurrent gain in highly doped (In,Ga)N/GaN MQW-based photodiodes. "Applied Physics Letters", v. 92 (n. 23); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.2942384.
Description
| Title: | Observation of giant photocurrent gain in highly doped (In,Ga)N/GaN MQW-based photodiodes |
|---|---|
| Author/s: |
|
| Item Type: | Article |
| Título de Revista/Publicación: | Applied Physics Letters |
| Date: | June 2008 |
| ISSN: | 0003-6951 |
| Volume: | 92 |
| Subjects: | |
| Freetext Keywords: | giant photocurrent gain; capacitance-voltage; charge accumulation |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The authors report on the observation of a giant photocurrent gain (>106) in highly doped (In,Ga)N/GaN multiple-quantum-well-based photodiodes, which decreases with temperature. This large photocurrent gain appears at low forward bias and strongly depends on the current transport mechanism. Results of capacitance-voltage measurements show that the photocurrent gain is related to the screening of the built-in electric field by charge accumulation. The role of the (Al,Ga)N electron blocking layer in current transport has been studied by comparing samples nominally identical except for the existence of this layer.
More information
| Item ID: | 2711 |
|---|---|
| DC Identifier: | https://oa.upm.es/2711/ |
| OAI Identifier: | oai:oa.upm.es:2711 |
| DOI: | 10.1063/1.2942384 |
| Official URL: | http://apl.aip.org/applab/v92/i23 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 12 Apr 2010 10:59 |
| Last Modified: | 20 Apr 2016 12:23 |
