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Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunnelling microscopy
Citation
Ulloa Herrero, José María and Koenraad, P.M. and Hopkinson, M. (2008). Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunnelling microscopy. "Applied Physics Letters", v. 93 (n. 8); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.2968213.
Description
| Title: | Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunnelling microscopy |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Applied Physics Letters |
| Date: | August 2008 |
| ISSN: | 0003-6951 |
| Volume: | 93 |
| Subjects: | |
| Faculty: | E.T.S.I. Aeronáuticos (UPM) |
| Department: | Aerotecnia [hasta 2014] |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The nitrogen distribution in GaAsNGaAs quantum wells _QWs_ grown by molecular beam epitaxy is studied on the atomic scale by cross-sectional scanning tunneling microscopy. No nitrogen clustering is observed in the range of N contents studied _between 1.0% and 2.5%, as measured by counting the individual N atoms inside the QW_. Nevertheless, the upper interface roughness increases with the amount of N. A residual N concentration in the GaAs barriers is found, which strongly increases with the amount of N in the QW.
More information
| Item ID: | 2717 |
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| DC Identifier: | https://oa.upm.es/2717/ |
| OAI Identifier: | oai:oa.upm.es:2717 |
| DOI: | 10.1063/1.2968213 |
| Official URL: | http://apl.aip.org/applab/v93/i8 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 06 Apr 2010 08:23 |
| Last Modified: | 12 Feb 2015 13:59 |
