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A GaAs metalorganic vapor phase epitaxy growth process o reduce Ge out-diffusion from the Ge substrate
Citation
Galiana Blanco, Beatriz and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos and Volz, K. and Stolz, W. (2008). A GaAs metalorganic vapor phase epitaxy growth process o reduce Ge out-diffusion from the Ge substrate. "Applied Physics Letters", v. 92 (n. 15); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.2901029.
Description
| Title: | A GaAs metalorganic vapor phase epitaxy growth process o reduce Ge out-diffusion from the Ge substrate |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Applied Physics Letters |
| Date: | April 2008 |
| ISSN: | 0003-6951 |
| Volume: | 92 |
| Subjects: | |
| Faculty: | E.T.S.I. Aeronáuticos (UPM) |
| Department: | Aerotecnia [hasta 2014] |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
A barrier based on GaAs for controlling the Ge out diffusion has been developed by metalorganic vapor phase epitaxy. It is based on a thin GaAs layer (50 nm) grown at a low temperature (≈500 °C) on top of a predeposition layer, showing that GaAs prevents the Ge diffusing when it is grown at a low temperature. Additionally, two different predeposition monolayers have been compared, concluding that when the Ga is deposited first, the diffusions across the GaAsGe heterointerface decrease.
More information
| Item ID: | 2723 |
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| DC Identifier: | https://oa.upm.es/2723/ |
| OAI Identifier: | oai:oa.upm.es:2723 |
| DOI: | 10.1063/1.2901029 |
| Official URL: | http://apl.aip.org/applab/v92/i15 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 05 Apr 2010 10:42 |
| Last Modified: | 16 Feb 2015 10:03 |
