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Te doping of GaAs using metalorganic vapor phase epitaxy: volatile vs. non volatile
Citation
Galiana Blanco, Beatriz and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos and García Vara, Iván (2008). Te doping of GaAs using metalorganic vapor phase epitaxy: volatile vs. non volatile. "Journal of Applied Physics", v. 104 (n. 11); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.3033398.
Description
| Title: | Te doping of GaAs using metalorganic vapor phase epitaxy: volatile vs. non volatile |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Journal of Applied Physics |
| Date: | December 2008 |
| ISSN: | 0021-8979 |
| Volume: | 104 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Electrónica Física |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The incorporation of Te into the crystal lattice, when it is used as an n-type dopant for GaAs grown by metalorganic vapor phase epitaxy, is studied. For this purpose, several growth temperatures, total pressures, growth rates, and substrate misorientations have been analyzed, from which it is concluded that depending on the substrate misorientation and total pressure used, the Te behaves like a volatile dopant or a nonvolatile dopant as result of the enhancement or minimization of its adsorption onto the growth surface.
More information
| Item ID: | 2727 |
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| DC Identifier: | https://oa.upm.es/2727/ |
| OAI Identifier: | oai:oa.upm.es:2727 |
| DOI: | 10.1063/1.3033398 |
| Official URL: | http://jap.aip.org/japiau/v104/i11 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 05 Apr 2010 08:04 |
| Last Modified: | 16 Feb 2015 10:07 |
