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Gacevic, Zarko and Fernández-Garrido, Sergio and Calleja Pardo, Enrique and Luna García de la Infanta, Esperanza and Trampert, Achim (2009). Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy. "Physica Status Solidi B-Basic Solid State Physics", v. 6 (n. 6-S2); pp.. ISSN 0370-1972. https://doi.org/10.1002/pssc.200880833.
Title: | Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Physica Status Solidi B-Basic Solid State Physics |
Date: | June 2009 |
ISSN: | 0370-1972 |
Volume: | 6 |
Subjects: | |
Freetext Keywords: | reflectivity, optical, scanning electron, DBRs periods |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Ingeniería Electrónica |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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We demonstrate six to ten period lattice-matched In(0.18) Al(0.82) N/GaN distributed Bragg reflectors with peak reflectivity centred around 400 nm, grown by molecular beam epitaxy. Thanks to the well-tuned ternary alloy composition crack-free layers have been obtained as confirmed by both optical and scanning electron microscopy. In addition, crosssectional analysis by high resolution transmission electron microscopy reveals highly periodic structure with abrupt interfaces. When the number of DBRs periods increased from six to ten, peak reflectivity increased from 45% to 60%. This increase was found to be in reasonable agreement with theoretical simulations.
Item ID: | 2745 |
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DC Identifier: | https://oa.upm.es/2745/ |
OAI Identifier: | oai:oa.upm.es:2745 |
DOI: | 10.1002/pssc.200880833 |
Official URL: | http://www3.interscience.wiley.com/journal/122407700/issue |
Deposited by: | Memoria Investigacion |
Deposited on: | 14 Apr 2010 09:52 |
Last Modified: | 20 Apr 2016 12:25 |