Citation
Nakamura, A. and Aoshima, T. and Hayashi, T and Gangil, S. and Temmyo, J. and Navarro Tobar, Álvaro and Pereiro Viterbo, Juan and Muñoz Merino, Elias
(2008).
Growth of Nitrogen-Doped Mg~xZn~1~-~xO for Use in Visible Rejection Photodetectors.
"Journal of The Korean Physical Society", v. 53
(n. 5);
pp. 2909-2912.
ISSN 0374-4884.
https://doi.org/10.3938/jkps.53.2909.
Abstract
Improvement in the Schottky behavior of metal (Au) contacts with Mg0.01Zn0.99O and Mg0.01Zn0.99O:N thin films were observed by treating the films with hydrogen peroxide (H2O2) (dipping of samples in H2O2 at 100 _C for 3 min). Contacts formed on untreated film showed Ohmic behavior in the current-voltage (I-V ) measurements. The H2O2 treatment led to a smooth surface morphology for the films and resulted in Schottky contact of Au fabricated on the treated films with barrier heights of 0.82≈0.85 eV. The absolute current density at a reverse bias of 3 V was 1≈6 × 10−6 A/cm2 for Au contacts on H2O2-treated films. The treated films showed lower electron concentration than the untreated films due to removal of the relatively high conducting top layers of the thin films. A metal-semiconductor-metal (MSM) detector was fabricated using a Mg0.05Zn0.95O:N film and was characterized for its spectral response.
