Full text
![[img]](https://oa.upm.es/style/images/fileicons/application_pdf.png)
|
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (274kB) |
Anisotropic magnetoresistive study in bilayer NiFe-NiO for sensor applications
Citation
Morón Fernández, Carlos and García García, Alfonso and Tremps Guerra, Enrique and Somolinos Sánchez, José Andrés (2013). Anisotropic magnetoresistive study in bilayer NiFe-NiO for sensor applications. In: "2nd Conference on Materials and Applications for Sensors and Transducers, IC-MAST", 24/05/2012-28/05/2012, Budapest, Hungary. ISBN 978-3-03785-616-1. pp. 167-170.
Description
| Title: | Anisotropic magnetoresistive study in bilayer NiFe-NiO for sensor applications |
|---|---|
| Author/s: |
|
| Item Type: | Presentation at Congress or Conference (Article) |
| Event Title: | 2nd Conference on Materials and Applications for Sensors and Transducers, IC-MAST |
| Event Dates: | 24/05/2012-28/05/2012 |
| Event Location: | Budapest, Hungary |
| Title of Book: | Materials and applications for sensors and transducers II |
| Date: | 2013 |
| ISBN: | 978-3-03785-616-1 |
| Subjects: | |
| Freetext Keywords: | Anisotropic; Magnetoresistance; Bilayer |
| Faculty: | E.U. de Arquitectura Técnica (UPM) |
| Department: | Tecnología de la Edificación |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Related with the detection of weak magnetic fields, the anisotropic magnetoresistive (AMR) effect is widely utilized in sensor applications. Exchange coupling between an antiferromagnet (AF) and the ferromagnet (FM) has been known as a significant parameter in the field sensitivity of magnetoresistance because of pinning effects on magnetic domain in FM layer by the bias field in AF. In this work we have studied the thermal evolution of the magnetization reversal processes in nanocrystalline exchange biased Ni80Fe20/Ni-O bilayers with large training effects and we report the anisotropic magnetoresistance ratio arising from field orientation in the bilayer.
More information
| Item ID: | 29142 |
|---|---|
| DC Identifier: | https://oa.upm.es/29142/ |
| OAI Identifier: | oai:oa.upm.es:29142 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 17 Jul 2014 11:41 |
| Last Modified: | 11 May 2020 08:19 |
