Cathodoluminescence study of ZnO wafers cut from hydrothermal crystals

Mass, J. and Avella Romero, Manuel and Jiménez López, Juan Ignacio and Rodríguez Domínguez, Andrés and Rodríguez Rodríguez, Tomás and Callahan, M. and Bliss, D. and Wang, Buguo (2008). Cathodoluminescence study of ZnO wafers cut from hydrothermal crystals. "Journal of Crystal Growth", v. 310 (n. 5); pp. 1000-1005. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2007.11.095.

Description

Title: Cathodoluminescence study of ZnO wafers cut from hydrothermal crystals
Author/s:
  • Mass, J.
  • Avella Romero, Manuel
  • Jiménez López, Juan Ignacio
  • Rodríguez Domínguez, Andrés
  • Rodríguez Rodríguez, Tomás
  • Callahan, M.
  • Bliss, D.
  • Wang, Buguo
Item Type: Article
Título de Revista/Publicación: Journal of Crystal Growth
Date: March 2008
ISSN: 0022-0248
Volume: 310
Subjects:
Freetext Keywords: A1. Cathodoluminescence; A1. Defects; B1. ZnO bulk
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

ZnO is a wide bandgap semiconductor with very promising expectation for UV optoelectronics. The existence of large crystals should allow homoepitaxial growth of ZnO films for advanced optoelectronic devices. However, the ZnO substrates are not yet mature. Both defect induced by growth and by polishing together with the high reactivity of the surface are problems to their industrial application. Cathodoluminescence (CL) was used to probe the quality of substrates from two different suppliers. The surface damage was studied by varying the penetration depth of the electron beam, allowing to observe significant differences between the two samples within a 0.5-mm-thick surface layer. CL spectra show a complex band (P1) at _3.3 eV composed of two overlapped bands (3.31 and 3.29 eV) related to point defects (PD) and the 1-LO phonon replica of the free exciton (FX-1LO). This band (P1) is shown to be very sensitive to the presence of defects and the surface and thermal treatments. Its intensity compared with the excitonic band intensity is demonstrated to provide criteria about the quality of the substrates.

More information

Item ID: 2940
DC Identifier: https://oa.upm.es/2940/
OAI Identifier: oai:oa.upm.es:2940
DOI: 10.1016/j.jcrysgro.2007.11.095
Official URL: http://www.elsevier.com/wps/find/journaldescriptio...
Deposited by: Memoria Investigacion
Deposited on: 06 May 2010 11:41
Last Modified: 20 Apr 2016 12:33
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