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A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
Citation
Fernández-Garrido, Sergio and Gacevic, Zarko and Calleja Pardo, Enrique (2008). A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy. "Applied Physics Letters", v. 93 (n. 19); pp. 191907-1. ISSN 0003-6951. https://doi.org/10.1063/1.3026541.
Description
| Title: | A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Applied Physics Letters |
| Date: | November 2008 |
| ISSN: | 0003-6951 |
| Volume: | 93 |
| Subjects: | |
| Freetext Keywords: | InAlN, diagram,plasma-assisted molecular,temperature, Arrhenius. |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450–610 °C range. In incorporation was found to decrease with substrate temperature due to thermal decomposition of the growing layer, while for a given temperature it increased with the impinging In flux until stoichiometry was reached at the growth front. The InN losses during growth followed an Arrhenius behavior characterized by an activation energy of 2.0 eV. A growth diagram highly instrumental to identify optimum growth conditions was established.
More information
| Item ID: | 2960 |
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| DC Identifier: | https://oa.upm.es/2960/ |
| OAI Identifier: | oai:oa.upm.es:2960 |
| DOI: | 10.1063/1.3026541 |
| Official URL: | http://aip.scitation.org/doi/10.1063/1.3026541 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 03 May 2010 09:45 |
| Last Modified: | 17 Jan 2017 11:05 |
