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González Díaz, Germán, García Hemme, Eric, García Hernansanz, Rodrigo, Olea Ariza, Javier, Pastor Pastor, David, Prado Millán, Alvaro del, Mártil de la Plaza, Ignacio and Wahnón Benarroch, Perla ORCID: https://orcid.org/0000-0002-5420-2906
(2013).
Intermediate band solar cells. The transition metal supersaturated Silicon approach.
In: "XXXIV Reunión Bienal de la Real Sociedad Española de Física", 15/07/2013 - 19/07/2013, Valencia, Spain.
Title: | Intermediate band solar cells. The transition metal supersaturated Silicon approach |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Article) |
Event Title: | XXXIV Reunión Bienal de la Real Sociedad Española de Física |
Event Dates: | 15/07/2013 - 19/07/2013 |
Event Location: | Valencia, Spain |
Title of Book: | Current Developments in Energy and Sustainability |
Date: | 2013 |
Subjects: | |
Freetext Keywords: | Titanium, vanadium, silicon, ion implantation, pulsed laser melting, intermediate band, solar cells |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Tecnologías Especiales Aplicadas a la Telecomunicación [hasta 2014] |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. This paper will deal with one of the ways to generate the IB namely the deep level center approach. We will discuss not only its existence but also the carriers lifetime recovery which is necessary to obtain the expected increase of the solar cell efficiency.
Item ID: | 33265 |
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DC Identifier: | https://oa.upm.es/33265/ |
OAI Identifier: | oai:oa.upm.es:33265 |
Deposited by: | Memoria Investigacion |
Deposited on: | 20 Jan 2015 20:18 |
Last Modified: | 20 Jan 2015 20:18 |