Intermediate band solar cells. The transition metal supersaturated Silicon approach

González Díaz, Germán, García Hemme, Eric, García Hernansanz, Rodrigo, Olea Ariza, Javier, Pastor Pastor, David, Prado Millán, Alvaro del, Mártil de la Plaza, Ignacio and Wahnón Benarroch, Perla ORCID: https://orcid.org/0000-0002-5420-2906 (2013). Intermediate band solar cells. The transition metal supersaturated Silicon approach. In: "XXXIV Reunión Bienal de la Real Sociedad Española de Física", 15/07/2013 - 19/07/2013, Valencia, Spain.

Description

Title: Intermediate band solar cells. The transition metal supersaturated Silicon approach
Author/s:
  • González Díaz, Germán
  • García Hemme, Eric
  • García Hernansanz, Rodrigo
  • Olea Ariza, Javier
  • Pastor Pastor, David
  • Prado Millán, Alvaro del
  • Mártil de la Plaza, Ignacio
  • Wahnón Benarroch, Perla https://orcid.org/0000-0002-5420-2906
Item Type: Presentation at Congress or Conference (Article)
Event Title: XXXIV Reunión Bienal de la Real Sociedad Española de Física
Event Dates: 15/07/2013 - 19/07/2013
Event Location: Valencia, Spain
Title of Book: Current Developments in Energy and Sustainability
Date: 2013
Subjects:
Freetext Keywords: Titanium, vanadium, silicon, ion implantation, pulsed laser melting, intermediate band, solar cells
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnologías Especiales Aplicadas a la Telecomunicación [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. This paper will deal with one of the ways to generate the IB namely the deep level center approach. We will discuss not only its existence but also the carriers lifetime recovery which is necessary to obtain the expected increase of the solar cell efficiency.

More information

Item ID: 33265
DC Identifier: https://oa.upm.es/33265/
OAI Identifier: oai:oa.upm.es:33265
Deposited by: Memoria Investigacion
Deposited on: 20 Jan 2015 20:18
Last Modified: 20 Jan 2015 20:18
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