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Barrigón Montañés, Enrique, Barrutia Poncela, Laura and Rey-Stolle Prado, Ignacio (2015). Optical in situ calibration of Sb to grow disordered GaInP by MOVPE. "Journal of Crystal Growth" ; ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2015.05.020.
Title: | Optical in situ calibration of Sb to grow disordered GaInP by MOVPE |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Journal of Crystal Growth |
Date: | 27 March 2015 |
ISSN: | 0022-0248 |
Subjects: | |
Freetext Keywords: | GaInP, Sb, Surfactant, Reflectance Anisotropy Spectroscopy |
Faculty: | Instituto de Energía Solar (IES) (UPM) |
Department: | Otro |
UPM's Research Group: | Semiconductores III-V |
Creative Commons Licenses: | None |
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Reflectance anisotropy spectroscopy (RAS) was employed to determine the optimal specific molar flow of Sb needed to grow GaInP with a given order parameter by MOVPE. The RAS signature of GaInP surfaces exposed to different Sb/P molar flow ratios were recorded, and the RAS peak at 3.02 eV provided a feature that was sensitive to the amount of Sb on the surface. The range of Sb/P ratios over which Sb acts as a surfactant was determined using the RA intensity of this peak, and different GaInP layers were grown using different Sb/P ratios. The order parameter of the resulting layers was measured by PL at 20 K. This procedure may be extensible to the calibration of surfactant-mediated growth of other materials exhibiting characteristic RAS signatures.
Item ID: | 35540 |
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DC Identifier: | https://oa.upm.es/35540/ |
OAI Identifier: | oai:oa.upm.es:35540 |
DOI: | 10.1016/j.jcrysgro.2015.05.020 |
Official URL: | https://www.sciencedirect.com/science/article/pii/... |
Deposited by: | Dr Ignacio Rey-Stolle |
Deposited on: | 08 Jun 2015 08:30 |
Last Modified: | 30 Nov 2022 09:00 |