A built-in CMOS Total Ionization Dose smart sensor

Abstract

Total Ionization Dose (TID) is traditionally measured by radiation sensitive FETs (RADFETs) that require a radiation hardened Analog-to-Digital Converter (ADC) stage. This work introduces a TID sensor based on a delay path whose propagation time is sensitive to the absorbed radiation. It presents the following advantages: it is a digital sensor able to be integrated in CMOS circuits and programmable systems such as FPGAs; it has a configurable sensitivity that allows to use this device for radiation doses ranging from very low to relatively high levels; its interface helps to integrate this sensor in a multidisciplinary sensor network; it is self-timed, hence it does not need a clock signal that can degrade its accuracy. The sensor has been prototyped in a 0.35μm technology, has an area of 0.047mm2, of which 22% is dedicated to measuring radiation, and an energy per conversion of 463pJ. Experimental irradiation tests have validated the correct response of the proposed TID sensor.