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Araujo Gay, Daniel, Villar Castro, María del Pilar, Lloret, Fernando, Rodríguez Madrid, Juan Gabriel, Fuentes Iriarte, Gonzalo ORCID: https://orcid.org/0000-0003-3803-6474, Williams, Oliver A. and Calle Gómez, Fernando
ORCID: https://orcid.org/0000-0001-7869-6704
(2014).
TEM study of the AlN grain orientation grown on NCD diamond substrate.
In: "12th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2014)", 18/06/2014 - 20/06/2014, Delphi, Greece. pp. 1-2.
Title: | TEM study of the AlN grain orientation grown on NCD diamond substrate |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Article) |
Event Title: | 12th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2014) |
Event Dates: | 18/06/2014 - 20/06/2014 |
Event Location: | Delphi, Greece |
Title of Book: | 12th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2014) |
Date: | 2014 |
Subjects: | |
Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
Department: | Otro |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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Piezoelectric AlN layer grain orientation, grown by room temperature reactive sputtering, is analyzed by transmission electron microscopy (TEM).Two types of samples are studied: (i) AlN grown on well-polished NCD (nano-crystalline diamond) diamond, (ii) AlN grown on an up-side down NCD layer previously grown on a Si substrate, i.e. diamond surface as smooth as that of Si substrates. The second set of sample show a faster lignment of their AlN grain caxis attributed to it smoother diamond free surface. No grain orientation relationship between diamond substrate grain and the AlN ones is evidenced, which seems to indicate the preponderance role of the surface substrate state.
Item ID: | 36757 |
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DC Identifier: | https://oa.upm.es/36757/ |
OAI Identifier: | oai:oa.upm.es:36757 |
Deposited by: | Memoria Investigacion |
Deposited on: | 09 Dec 2015 17:16 |
Last Modified: | 06 Feb 2023 08:01 |