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Growth of InGaN/GaN core-shell structures by molecular beam epitaxy
Citation
Albert, Steven, Bengoechea Encabo, Ana, Sabido Siller, María del Carmen, Müller, M., Schmidt, G., Metzner, S., Veit, P., Bertram, F., Sánchez García, Miguel Angel 
ORCID: https://orcid.org/0000-0002-1494-9351, Christen, J. and Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982
(2014).
Growth of InGaN/GaN core-shell structures by molecular beam epitaxy.
In: "European Materials Research Society (E-MRS) 2014 Spring Meeting", 19/05/2014 - 26/05/2014, Lille, France. pp. 1-4.
Description
| Title: | Growth of InGaN/GaN core-shell structures by molecular beam epitaxy |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Speech) |
| Event Title: | European Materials Research Society (E-MRS) 2014 Spring Meeting |
| Event Dates: | 19/05/2014 - 26/05/2014 |
| Event Location: | Lille, France |
| Title of Book: | European Materials Research Society (E-MRS) 2014 Spring Meeting |
| Date: | 2014 |
| Subjects: | |
| Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Department: | Otro |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Efficiency drop in the green–yellow region in planar InGaN structures associated with: -high defect density
-high spontaneous and piezoelectric polarization
More information
| Item ID: | 36788 |
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| DC Identifier: | https://oa.upm.es/36788/ |
| OAI Identifier: | oai:oa.upm.es:36788 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 05 Dec 2015 09:39 |
| Last Modified: | 06 Feb 2023 07:59 |
