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López Estrada, Esther ORCID: https://orcid.org/0000-0003-4256-9329, Datas Medina, Alejandro
ORCID: https://orcid.org/0000-0001-5964-3818, Ramiro Gonzalez, Iñigo
ORCID: https://orcid.org/0000-0002-9663-4002, García-Linares Fontes, Pablo
ORCID: https://orcid.org/0000-0003-2369-3017, Antolín Fernández, Elisa
ORCID: https://orcid.org/0000-0002-5220-2849, Artacho Huertas, Irene
ORCID: https://orcid.org/0000-0003-0213-2966, Martí Vega, Antonio
ORCID: https://orcid.org/0000-0002-8841-7091, Luque López, Antonio
ORCID: https://orcid.org/0000-0002-8357-6413, Shoji, Y., Sogabe, T., Ogura, A. and Okada, Y.
(2016).
Demonstration of the operation principles of intermediate band solar cells at room temperature.
"Solar Energy Materials and Solar Cells", v. 149
(n. May'16);
pp. 15-18.
ISSN 0927-0248.
https://doi.org/10.1016/j.solmat.2015.12.031.
Title: | Demonstration of the operation principles of intermediate band solar cells at room temperature |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Solar Energy Materials and Solar Cells |
Date: | May 2016 |
ISSN: | 0927-0248 |
Volume: | 149 |
Subjects: | |
Freetext Keywords: | Intermediate band solar cells; InGaAs/AlGaAs quantum dots; Two-photon photocurrent; Voltage preservation |
Faculty: | Instituto de Energía Solar (IES) (UPM) |
Department: | Electrónica Física |
UPM's Research Group: | Silicio y Nuevos Conceptos de Células Solares |
Creative Commons Licenses: | None |
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In this work we report, for the first time at room temperature, experimental results that prove, simultaneously in the same device, the two main physical principles involved in the operation of intermediate band solar cells: (1) the production of sub-bandgap photocurrent by two optical transitions through the intermediate band; (2) the generation of an output voltage which is not limited by the photon energy absorption threshold. These principles, which had always required cryogenic temperatures to be evidenced all together, are now demonstrated at room temperature on an intermediate band solar cell based on InAs quantum dots with Al0.3Ga0.7As barriers.
Item ID: | 39030 |
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DC Identifier: | https://oa.upm.es/39030/ |
OAI Identifier: | oai:oa.upm.es:39030 |
DOI: | 10.1016/j.solmat.2015.12.031 |
Official URL: | https://doi.org/10.1016/j.solmat.2015.12.031 |
Deposited by: | Prof. Antonio Martí Vega |
Deposited on: | 14 Jan 2016 11:55 |
Last Modified: | 30 Nov 2022 09:00 |