Solar driven energy conversion applications based on 3C-SiC

Sun, Jianwu, Jokubavicius, Valdas, Gao, Lu, Booker, Ian, Jansson, Mattias, Liu, Xinyu, Hofmann, Jan P., Hensen, Emiel J.M., Linnarsson, Margareta, Wellmann, Peter, Ramiro Gonzalez, Iñigo ORCID: https://orcid.org/0000-0002-9663-4002, Martí Vega, Antonio ORCID: https://orcid.org/0000-0002-8841-7091, Yakimova, Rositsa and Syväjärvi, Mikael (2016). Solar driven energy conversion applications based on 3C-SiC. "Materials Science Forum", v. 858 ; pp. 1028-1031. ISSN 1662-9752. https://doi.org/10.4028/www.scientific.net/MSF.858.1028.

Description

Title: Solar driven energy conversion applications based on 3C-SiC
Author/s:
  • Sun, Jianwu
  • Jokubavicius, Valdas
  • Gao, Lu
  • Booker, Ian
  • Jansson, Mattias
  • Liu, Xinyu
  • Hofmann, Jan P.
  • Hensen, Emiel J.M.
  • Linnarsson, Margareta
  • Wellmann, Peter
  • Ramiro Gonzalez, Iñigo https://orcid.org/0000-0002-9663-4002
  • Martí Vega, Antonio https://orcid.org/0000-0002-8841-7091
  • Yakimova, Rositsa
  • Syväjärvi, Mikael
Item Type: Article
Título de Revista/Publicación: Materials Science Forum
Date: May 2016
ISSN: 1662-9752
Volume: 858
Subjects:
Freetext Keywords: cubic silicon carbide (3C-SiC), solar cell, photoelectrochemical (PEC) water splitting
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
UPM's Research Group: Silicio y Nuevos Conceptos para Células Solares
Creative Commons Licenses: None

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Abstract

There is a strong and growing worldwide research on exploring renewable energy resources. Solar energy is the most abundant, inexhaustible and clean energy source, but there are profound material challenges to capture, convert and store solar energy. In this work, we explore 3C-SiC as an attractive material towards solar-driven energy conversion applications: (i) Boron doped 3C-SiC as candidate for an intermediate band photovoltaic material, and (ii) 3C-SiC as a photoelectrode for solar-driven water splitting. Absorption spectrum of boron doped 3C-SiC shows a deep energy level at ~0.7 eV above the valence band edge. This indicates that boron doped 3C-SiC may be a good candidate as an intermediate band photovoltaic material, and that bulk like 3C-SiC can have sufficient quality to be a promising electrode for photoelectrochemical water splitting.

Funding Projects

Type
Code
Acronym
Leader
Title
Madrid Regional Government
S2013/MAE-2780
MADRID-PV
Antonio Martí Vega
Materiales, dispositivos y tecnología para el desarrollo de la industria fotovoltaica

More information

Item ID: 40510
DC Identifier: https://oa.upm.es/40510/
OAI Identifier: oai:oa.upm.es:40510
DOI: 10.4028/www.scientific.net/MSF.858.1028
Official URL: https://doi.org/10.4028/www.scientific.net/MSF.858...
Deposited by: Prof. Antonio Martí Vega
Deposited on: 18 May 2016 10:57
Last Modified: 30 Nov 2022 09:00
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