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Soto Rodríguez, Paul, Aseev, Pavel, Gómez Hernández, Víctor Jesús, Ul Hassan Alvi, Naveed, Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982, Manuel, José M., Morales Sánchez, Francisco Miguel, Kumar, Praveen, Jiménez, Juan J., García, Rafael, Senichev, Alexander, Lienau, Christoph and Nötzel, Richard
(2015).
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111).
"Applied Physics Letters", v. 106
(n. 2);
pp..
ISSN 0003-6951.
https://doi.org/10.1063/1.4905662.
Title: | Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111) |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Applied Physics Letters |
Date: | February 2015 |
ISSN: | 0003-6951 |
Volume: | 106 |
Subjects: | |
Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
Department: | Otro |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In0.73Ga0.27N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 109 cm−2. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.
Item ID: | 40802 |
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DC Identifier: | https://oa.upm.es/40802/ |
OAI Identifier: | oai:oa.upm.es:40802 |
DOI: | 10.1063/1.4905662 |
Official URL: | http://scitation.aip.org/content/aip/journal/apl/1... |
Deposited by: | Memoria Investigacion |
Deposited on: | 05 Sep 2016 16:33 |
Last Modified: | 05 Jun 2019 15:24 |