Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

Soto Rodríguez, Paul, Aseev, Pavel, Gómez Hernández, Víctor Jesús, Ul Hassan Alvi, Naveed, Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982, Manuel, José M., Morales Sánchez, Francisco Miguel, Kumar, Praveen, Jiménez, Juan J., García, Rafael, Senichev, Alexander, Lienau, Christoph and Nötzel, Richard (2015). Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111). "Applied Physics Letters", v. 106 (n. 2); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4905662.

Description

Title: Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)
Author/s:
  • Soto Rodríguez, Paul
  • Aseev, Pavel
  • Gómez Hernández, Víctor Jesús
  • Ul Hassan Alvi, Naveed
  • Calleja Pardo, Enrique https://orcid.org/0000-0002-3686-8982
  • Manuel, José M.
  • Morales Sánchez, Francisco Miguel
  • Kumar, Praveen
  • Jiménez, Juan J.
  • García, Rafael
  • Senichev, Alexander
  • Lienau, Christoph
  • Nötzel, Richard
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: February 2015
ISSN: 0003-6951
Volume: 106
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[thumbnail of INVE_MEM_2015_203695.pdf]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (2MB) | Preview

Abstract

The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In0.73Ga0.27N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 109 cm−2. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

Funding Projects

Type
Code
Acronym
Leader
Title
FP7
280879-2
CRONOS
Unspecified
Time dynamics and ContROl in naNOStructures for magnetic recording and energy applications

More information

Item ID: 40802
DC Identifier: https://oa.upm.es/40802/
OAI Identifier: oai:oa.upm.es:40802
DOI: 10.1063/1.4905662
Official URL: http://scitation.aip.org/content/aip/journal/apl/1...
Deposited by: Memoria Investigacion
Deposited on: 05 Sep 2016 16:33
Last Modified: 05 Jun 2019 15:24
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM